3N900
Description
RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligned planar process and improved terminal technology,reducing the conduction loss,enhancing the avalanche energy.
Features
Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% Avalanche Tested ROHS pliant Halogen-free
Application
High efficiency swith mode power supplies Electronic lamp ballasts Uninterruptible Power Supply UPS
VDS@Tjmax
RDS(ON) TYP
Ω
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
RMP3N90IP
TO-251
RMP3N90LD
TO-252
Table 1. Absolute Maximum Ratings (TC=25 )
Parameter
Symbol
Drain-Source Voltage (VGS 0V
Gate-Source Voltage (VDS 0V)
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1)
ID (DC) IDM (pluse)
Maximum Power Dissipation(Tc=25 )
Single pulse avalanche energy...
