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3N900 - N-Channel ENHANCEMENT MODE MOSFET

Description

RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligned planar process and improved terminal technology,reducing the conduction loss,enhancing the avalanche energy.

Features

  • Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% Avalanche Tested ROHS compliant Halogen-free.

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Datasheet preview – 3N900

Datasheet Details

Part number 3N900
Manufacturer Rectron
File Size 597.52 KB
Description N-Channel ENHANCEMENT MODE MOSFET
Datasheet download datasheet 3N900 Datasheet
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    RMP3N90IP RMP3N90LD N-Channel ENHANCEMENT MODE MOSFET General Description RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligned planar process and improved terminal technology,reducing the conduction loss,enhancing the avalanche energy. Features Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% Avalanche Tested ROHS compliant Halogen-free Application High efficiency swith mode power supplies Electronic lamp ballasts Uninterruptible Power Supply UPS VDS@Tjmax 900 V RDS(ON) TYP 2.8 Ω ID 3.0 A Schematic diagram Package Marking And Ordering Information Device Device Package Marking RMP3N90IP TO-251 3N900 RMP3N90LD TO-252 3N900 Table 1.
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