RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligned planar process and improved terminal technology,reducing the conduction loss,enhancing the avalanche energy.
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3N900. For precise diagrams, and layout, please refer to the original PDF.
RMP3N90IP RMP3N90LD N-Channel ENHANCEMENT MODE MOSFET General Description RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligned planar process and i...
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hancement mode MOSFET,which uses the self-aligned planar process and improved terminal technology,reducing the conduction loss,enhancing the avalanche energy. Features Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% Avalanche Tested ROHS compliant Halogen-free Application High efficiency swith mode power supplies Electronic lamp ballasts Uninterruptible Power Supply UPS VDS@Tjmax 900 V RDS(ON) TYP 2.8 Ω ID 3.0 A Schematic diagram Package Marking And Ordering Information Device Device Package Marking RMP3N90IP TO-251 3N900 RMP3N90LD TO-252 3N900 Table 1.
3N900 Datasheet
