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4N650 - N-Channel Super Junction Power MOSFET

General Description

technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Key Features

  • ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low Gate Charge cause lower driving requirements ƽ100% Avalanche Tested ƽROHS compliant VDS@Tjmax 650 V RDS(ON) MAX 1200 mΩ ID 4 A.

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Datasheet Details

Part number 4N650
Manufacturer Rectron
File Size 961.44 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet 4N650 Datasheet

Full PDF Text Transcription (Reference)

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N-Channel Super Junction Power MOSFET Ċ RM4N650T2 RM4N650HD RM4N650TI General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.