Rectron Semiconductor 4N650
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.| Part No. | 4N650 |
|---|---|
| Datasheet | 4N650 Download |
| Manufacturer |  Rectron Semiconductor |
| Description | N-Channel Super Junction Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low Gate Charge cause lower driving requirements ƽ100% Avalanche Tested ƽROHS compliant VDS@Tjmax 650 V RDS(ON) MAX 1200 mΩ ID 4 A Application ƽ Power factor correction˄PFC˅ ƽ Switched mode power supplies(SMPS) ƽ Uninterruptible Power Supply˄UPS˅ Schematic diagram Package Marking And Ordering Information Device Device Package Marking RM4N650T2 TO-220 4N650 RM4N650HD TO-263 4N650 RM4N650TI TO-220F 4N650 TO-263 TO-220 Table 1.ABSOLUTE MAXIMUM RATINGS
(TC=25ć) Parameter Symbol Drain-Source Voltage (VGS=0V˅ Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Maximum Power Dissipation(Tc=25°C) Derate above 25ć Single pulse avalanche energy (Note2) Avalanche current(Note 1) Repetitive Avalanche energy ˈtAR limited by Tjmax (Note 1) VDS VGS ID (DC) ID (DC) IDM (pluse) PD EAS IAR...
