Datasheet Summary
RM50N150DF
N-Channel Super Trench Power MOSFET
Description
The RM50N150DF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
ƽ VDS =150V,ID =50A RDS(ON) <19mΩ @ VGS=10V
ƽ Excellent gate charge x RDS(on) product(FOM) ƽ Very low on-resistance RDS(on) ƽ 175 °C operating temperature ƽ Pb-free lead plating ƽ 100% UIS tested
Application
ƽ DC/DC Converter ƽ Ideal for high-frequency switching and synchronous...