Rectron Semiconductor 50N150
The RM50N150DF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.| Part No. | 50N150 |
|---|---|
| Datasheet | 50N150 Download |
| Manufacturer |  Rectron Semiconductor |
| Description | N-Channel Super Trench Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
This device is ideal for high-frequency switching and synchronous rectification.GENERAL FEATURES
ƽ VDS =150V,ID =50A RDS(ON) <19mΩ @ VGS=10V ƽ Excellent gate charge x RDS(on) product(FOM) ƽ Very low on-resistance RDS(on) ƽ 175 °C operating temperature ƽ Pb-free lead plating ƽ 100% UIS tested Application ƽ DC/DC Converter ƽ Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package 50N150 RM50N150DF DFN5X6-8L Schematic Diagram DDDD DDDD SSSG Top View GSSS Bottom View Reel Size - Tape width - Quantity -ABSOLUTE MAXIMUM RATINGS
(TC=25ćunless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100ć) ID (100ć) Pulsed Drain Current IDM Maximum Power Dissipation PD Derating factor Single pulse avalanche energy (Note 5) EAS Operating Junction and Storage Temperature Range Therm...
