DESCRIPTION
RM50N30DN seriesarefromAdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. Simple Drive Requirement Small Size & Lower Profile RoHS Compliant & Halogen-Free BVDSS RDS(ON) ID 30V 4.1mӨ 50A D D D D S S S G DFN 3 x 3 D G S Package Marking and Ordering Information Device Marking Device Device Package 50N30 RM50N30DN DFN 3x3 Reel Size - Tape width - Quantity - ABSOLUTE MAXIMUM RATINGS
@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25к ID@TA=70к IDM PD@TA=25к Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation 30 V +20 V 50 A 42 A 72 A 25 W TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 к -55 to 150 к Thermal Data Symbol Parameter Rthj-c Rthj...
Rectron Semiconductor
