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50N30 - N-Channel Super Trench Power MOSFET

Description

RM50N30DN seriesarefromAdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet Details

Part number 50N30
Manufacturer Rectron
File Size 817.99 KB
Description N-Channel Super Trench Power MOSFET
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RM50N30DN Description RM50N30DN seriesarefromAdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The DFN 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. Simple Drive Requirement Small Size & Lower Profile RoHS Compliant & Halogen-Free BVDSS RDS(ON) ID 30V 4.1mӨ 50A D D D D S S S G DFN 3 x 3 D G S Package Marking and Ordering Information Device Marking Device Device Package 50N30 RM50N30DN DFN 3x3 Reel Size - Tape width - Quantity - Absolute Maximum Ratings@Tj=25o.
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