Rectron Semiconductor BAS16T
Switching Diode
MAXIMUM RATINGS
(Ta = 25 ℃) Symbol VR VRM IO Pd TJ IFSM IF Tstg Rth Parameter Reverse Voltage Peak Reverse Voltage Average Rectified Current Power Dissipation Junction Temperature NON-Repetitive Peak Forward Surge Current (@t=8.3ms.) Peak Forward Current Storage Temperature Thermal Resistance Value 100 100 150 200 150 2 300 -55 to 155 625 Units V V mA mW ℃ A mA ℃ ℃/WELECTRICAL CHARACTERISTICS
(Ta = 25 ℃) Symbol Parameter VF Forward Voltage VR Reverse breakdown voltage IR Reverse voltage leakage current CJ Typical Junction Capacitance Trr Reverse recovery time Test Conditions IF=1mA IF=10mA IF=50mA IF=150mA IR=1uA VR=75V VR=20V VR=0V, f=1.0MHz IF= IR=10mA,Irr=0.1x IR RL=100Ω Min Max Units 0.715 V 0.855 V 1.0 V 1.25 V 75 V 1 uA 25 nA 2 pF 4 nS 2024-03/03 REV:O RATING AND CHARACTERISTICS CURVES(BAS16T) Typical Instantaneous Forward Characteristics Typical Reverse Leakage Characteristics Power Derating Curve Capacitance Curve ? ?? ?? ? ? Ordering Information Package SOT523 Package Code -T...