Rectron Semiconductor BC846
NPN Silicon Planar Epitaxial Transistors
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 oC unless specified otherwise)DESCRIPTION
Collector Base Voltage Collector Emmitter Voltage (VBE = 0V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 25 oC Storge Temperature Junction Temperature SYMBOL VCBO VCES VCEO VEBO IC ICM -IEM IBM Ptot** Tstg Tj BC846 80 80 65 6 Thermal Resistance From junction to ambient Rth(j-a)** **Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm BC847 50 50 45 6 100 200 200 200 250 -55 to +150 150 500 BC848 30 30 30 5 UNITS V V V V mA mA mA mW oC oC K/W 1 of 2 BC846 BC847 BC848ELECTRICAL CHARACTERISTICS
(at Ta=25 oC unless otherwise specified)DESCRIPTION
Collector Cut Off Current SYMBOL TEST CONDITION ICBO VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VBE(on)* IC = 2mA, VCE = 5V IC...