Rectron Semiconductor BC846B
NPN Transistor
FEATURES
* Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : 0.1 A * Collector-base voltage VCBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OCMECHANICAL DATA
* Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gramMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.ELECTRICAL CHARACTERISTICS
( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL Collector - base breakdown voltage (IC= 10mA, IE=0) VCBO Collector - emitter breakdown voltage (IC= 10mA, IB=0) Emitter - base breakdown voltage (IE= 10mA, IC=0) VCEO VEBO Collector cut - off current (VCB= 70V, IE=0) ICBO Collector cut - off current (VCE= 60V, IB=0) Emitter cut - off current (VEB= 5V, IC=0) ICEO IEBO DC...