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BC857C Datasheet PDF

Rectron Semiconductor BC857C

PNP Transistor

Part No. BC857C
Datasheet BC857C Download
Manufacturer
Rectron Semiconductor
Description PNP Transistor
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BC857C datasheet page 1 preview

FEATURES

* Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -50 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC

MECHANICAL DATA

* Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

ELECTRICAL CHARACTERISTICS

( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL Collector - base breakdown voltage (IC= -10mA, IE=0) V(BR)CBO Collector - emitter breakdown voltage (IC= -10mA, IB=0) Emitter - base breakdown voltage (IE= -10mA, IC=0) Collector cut - off current (VCB= -45V, IE=0) V(BR)CEO V(BR)EBO ICBO Collector cut - off current (VCE= -40V, IB=0) Emitter cut - off current (VEB=...
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