Rectron Semiconductor BC858C
PNP Transistor
| Part No. | BC858C |
|---|---|
| Datasheet | BC858C Download |
| Manufacturer |  Rectron Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
* Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : -0.1 A * Collector-base voltage V(BR)CBO : -30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OCMECHANICAL DATA
* Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gramMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.ELECTRICAL CHARACTERISTICS
( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Collector-base breakdown voltage (IC= -10mA, IE=0) Collector-emitter breakdown voltage (IC= -10mA, IB=0) Emitter-base breakdown voltage (IE= -10mA, IC=0) Collector cut-off current (VCB= -25V, IE=0) SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector cut-off current (VCE= -25V, IB=0) Emitter cut-off current (VEB= -5V, IC=0)...