Rectron Semiconductor BCW66F
NPN Transistor
| Part No. | BCW66F |
|---|---|
| Datasheet | BCW66F Download |
| Manufacturer |  Rectron Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
* Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.8 A * Collector-base voltage V(BR)CBO : 75 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OCMECHANICAL DATA
* Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gramMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified. Single phase , half wave, 60HZ, resistive or inductive load. For capacitive load, derate current by 20%.ELECTRICAL CHARACTERISTICS
( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Collector-base breakdown voltage (IC= 10mA, IE=0) Collector-emitter breakdown voltage (IC= 10mA, IB=0) Emitter-base breakdown voltage (IE= 10mA, IC=0) Collector cut-off current (VCB= 45V, IE=0) SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector cut-off current (VEB= 4V, IC=0) DC current gain (VCE= 10V, IC= 0.1mA) IEBO DC current gai...