Rectron Semiconductor CDL13007
NPN PLASTIC POWER TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation upto Ta=25ºC Power Dissipation upto Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC PD PD Tj, Tstg VALUE 700 400 9 8 2 80 - 55 to +150 UNIT V V V A W W ºCELECTRICAL CHARACTERISTICS
(Tc=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Cut Off Current ICBO VCB=700V, IE=0 Emitter Cut Off Current IEBO VEB=9V, IC=0 DC Current Gain *hFE IC=2A, VCE=5V (Note1) Ratio Between hFE1 of Low Current and hFE2 of High Current hFE1/hFE2 hFE1 IC=5mA, VCE=5V hFE2 IC=2A, VCE=5V Collector Emitter Saturation Voltage *VCE (sat) IC=5A, IB=1A Base Emitter Saturation Voltage *VBE (sat) IC=5A, IB=1A Transition Frequency fT VCE=10V, IC=500mA, f=1MHz MIN TYP MAX 1.0 1.0 8 40 0.75 1.5 1.5 4 UNIT mA mA V V MHz Switching TimeDESCRIPTION
Fall Time Storage Time SYMBOL tf ts TEST CONDITION IC=2A, IB1= -1B2=0.4A VCC=120V MIN TYP MAX 0.8 3.6 UNIT ms ms *hFE Classification Marking Product is pre-selected in DC Current Gain (Groups A to E).