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ES1JW Datasheet PDF

Rectron Semiconductor ES1JW

SURFACE MOUNT SUPERFAST RECOVERY BARRIER RECTIFIER

Part No. ES1JW
Datasheet ES1JW Download
Manufacturer
Rectron Semiconductor
Description SURFACE MOUNT SUPERFAST RECOVERY BARRIER RECTIFIER
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ES1JW datasheet page 1 preview
ES1AW THRU ES1J W SOD123F(L) Typical Current Squarad Time I2t 2.5 A2S 2017-04/01 REV:O Average Forward Current (A) RATING AND CHARACTERISTICS CURVES (ES1AW THRU ES1J W) Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive trr +0.5 + 25Vdc approx - 1 ohm NonInductive D.U.T PULSE GENERATOR Note 2 OSCILLOSCOPE Note 1 0 -0.25 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. -1.0 10ns/div Set time Base for 10ns/div Fig.2 Maximum Average Forward Current Rating 1.2 1.0 0.8 0.6 0.4 Single phase half wave resistive or inductive P.C.B mounted on 0.315×0. 315"(8.0×8. 0mm) 0.2 pad areas 0.0 25 50 75 100 125 150 175 Lead Temperature (°C) IR- Reverse Current (μA) Fig.3 Typical Reverse Characteristics 300 100 10 TJ=125°C TJ=75°C 1.0 TJ=25°C 0.1 0 20 40 60 80 % of PIV.VOLTS 100 Fig.4 Typical Forward Characteristics 10 TJ=25°C 1.0 0.1 ES1AW ES1EW
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