MM4150
RECTRON SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4150 mini-MELF SIGNAL DIODE
Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Reverse Voltage VR 50 Reverse Recovery trr 4 Time Power Dissipation Ptot 500 Forward Current Junction Temp. Storage Temp. Mechanical Data
Items Package Case Lead/Finish Chip Materials MELF Hermetically sealed glass Double stud/Solder Plating Glass Passivated
Mini m i n i -MEL F
Unit V ns m W m A °C °C
1.40 1.30
IF Tj Tstg
200 -65 to 200 -65 to 200
0.4 0.2
2 Places
3.40 3.20
Dimensions in millimeters
Electrical Characteristics (Ta=25°C) Ratings Minimum Breakdown Voltage @IR= 100u A Peak Forward Surge Current PW< 1sec. Maximum Forward Voltage IF= 200m A Maximum Reverse Current VR= 50V Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10m A, VR= 6V, IRR= 1m A, RL= 100 Ω Maximum Thermal Resistance
Symbol BV IFsurge VF IR Cj trr RθJA
Ratings 75 500 1.0 100 4 4 0.35
Unit V m A V n A p F ns °C/m W
RECTRON USA
1315 John...
