Rectron Semiconductor MMBD1505A
LOW LEAKAGE DIODE
FEATURES
Low Leakage High Conductance MARKING: A15 A15 SOT-23MAXIMUM RATINGS
( Ta=25ć unless otherwise noted ) Symbol Parameter VR DC Blocking Voltage IO Continuous Forward Current IFM Peak Forward Current IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms PD Power Dissipation RθJA Thermal Resistance from Junction to Ambient Tj Junction Temperature Tstg Storage Temperature Value 200 200 700 2.0 350 357 150 -55~+150 Unit V mA mA A mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25ć unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Total capacitance Symbol V(BR) IR VF Ctot Test conditions IR=5μA VR=180V IF=1mA IF=10mA IF=50mA IF=100mA IF=200mA IF=300mA VR=0V,f=1MHz Min Typ Max Unit 200 V 10 nA 0.75 0.85 0.95 V 1.1 1.3 1.5 4 pF 2016-07 REV: O2 FORWARD CURRENT I (mA) F RATING AND CHARACTERISTICS CURVES ( MMBD1505A ) Forward Characteristics 300 100 Reverse Characteristics 100 T =100ć a 10 RE