Rectron Semiconductor MMBD4448HTW
Switching Diode
| Part No. | MMBD4448HTW |
|---|---|
| Datasheet | MMBD4448HTW Download |
| Manufacturer |  Rectron Semiconductor |
| Description | Switching Diode |
| Buy | Stock & Price |
APPLICATIONS
◇Rugged And Reliable Device Marking Code MMBD4448HTW KAA Equivalent Circuit SOT363-6L C1 C2 C3 KAA A1 A2 A3MAXIMUM RATINGS
（Ta = 25 ℃） Symbol Parameter VRM Non-Repetitive Peak Reverse Voltage VRRM Repetitive Peak Reverse Voltage IFRM Repetitive Peak Forward Current IO Continuous Forward Current Non-Repetitive Peak Forward Surge Current @t=1uS IFSM @t=1.0S Pd Power Dissipation TJ Junction Temperature TSTG, Storage Temperature Rθ JA Thermal Resistance From Junction To AmbientELECTRICAL CHARACTERISTICS
（Ta = 25 ℃） Symbol Parameter Test Conditions VBR Reverse Breakdown Voltage IR=100uA Reverse Voltage Leakage IR Current VR=20V VR=70V IF=5mA VF Forward Voltage IF=10mA IF=50mA IF=150mA CD Diode Capacitance trr Reverse Recovery Time VR=6.0V,f=1MHZ IF=5mA,VR=6V Value 100 80 500 250 4.0 1.5 200 150 -65 to 150 625 Units V V mA mA A mW ℃ ℃ ℃/W Min Typ Max Units 80 V 25 nA 100 nA 0.62 0.72 V 0.855 V 1.0 V 1.25 V 3.5 pF 4.0 nS 2023-11/03 REV:O RATING AND CHARACTERISTICS CURVES (MMBD4448HTW) ? ?? ?? ? ?
