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RM2312 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: Rectron

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Datasheet Details

Part number RM2312
Manufacturer Rectron
File Size 171.80 KB
Description N-Channel Enhancement Mode Power MOSFET
Download RM2312 Download (PDF)

General Description

The RM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

General

Overview

RM2312 N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS = 20V,ID = 4.5A RDS(ON) < 45mΩ @ VGS=1.8V RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V High power and current handing capability Lead free product is acquired Surface mount package.

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