Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The RM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
General Features
VDS = 20V,ID = 4.5A RDS(ON) < 45mΩ @ VGS=1.8V RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
High power and current handing capability Lead free product is acquired Surface mount package
Application
Battery protection
Load switch
Power management Package:3K/Reel,9K/Box,72K/Carton Halogen-free P/N suffix V means AEC-Q101 qualified, e.g:RM2312V
Package Marking and Ordering...