RM2312 Overview
The RM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
Datasheet Details
| Part number | RM2312 |
|---|---|
| Datasheet | RM2312-Rectron.pdf |
| File Size | 171.80 KB |
| Manufacturer | Rectron |
| Description | N-Channel Enhancement Mode Power MOSFET |
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