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RM3075S8 - N and P-Channel Enhancement Mode Power MOSFET

General Description

The RM3075S8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

Key Features

  • N-Channel VDS = 30V,ID =6.8A RDS(ON) < 40m @ VGS=4.5V RDS(ON) < 27m @ VGS=10V P-Channel VDS = -30V,ID = -4.6A RDS(ON) < 103m @ VGS=-4.5V RDS(ON) < 64m @ VGS=-10V N-channel P-channel Schematic diagram 3075 High power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment.

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Datasheet Details

Part number RM3075S8
Manufacturer Rectron
File Size 612.32 KB
Description N and P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet RM3075S8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RM3075S8 N and P-Channel Enhancement Mode Power MOSFET Description The RM3075S8 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for high and low side switches for inverter ; high and low side switches for generic Half-Bridge, low voltage applications such as DC/DC converters. General Features N-Channel VDS = 30V,ID =6.8A RDS(ON) < 40m @ VGS=4.5V RDS(ON) < 27m @ VGS=10V P-Channel VDS = -30V,ID = -4.6A RDS(ON) < 103m @ VGS=-4.