The RM30N250DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
| Part number | RM30N250DF |
|---|---|
| Manufacturer | Rectron |
| File Size | 146.40 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 RM30N250DF Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| RM300CA-9W | Diode-Module | Mitsubishi Electric Semiconductor |
| RM300CA-9W | Diode-Module | Powerex Power Semiconductors |
| RM300HA-24F | Diode-Module | Mitsubishi Electric Semiconductor |
| RM302024 | Power Relay | TE |
| RM302524 | Power Relay | TE |
| Part Number | Description |
|---|---|
| RM3075S8 | N and P-Channel Enhancement Mode Power MOSFET |
| RM30P30D3 | P-Channel Enhancement Mode Power MOSFET |
| RM3400 | N-Channel Enhancement Mode Power MOSFET |
| RM3401 | P-Channel Enhancement Mode Power MOSFET |
| RM3415 | P-Channel Enhancement Mode Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
