RM30N250DF - N-Channel Enhancement Mode Power MOSFET

Description

The RM30N250DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

ƽ VDS =250V,ID=29A RDS(ON).

Rectron

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Datasheet Details

Part number	RM30N250DF
Manufacturer	Rectron
File Size	146.40 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	RM30N250DF Datasheet
Additional preview pages of the RM30N250DF datasheet.

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Full PDF Text Transcription

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RM30N250DF N-Channel Enhancement Mode Power MOSFET Description The RM30N250DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Nov 20, 2024 |