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RM3400 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The RM3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • ƽ VDS = 30V,ID = 5.8A RDS(ON) < 59mȍ @ VGS=2.5V RDS(ON) < 45mȍ @ VGS=4.5V RDS(ON) < 41mȍ @ VGS=10V ƽ High power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package ƽ PWM.

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Datasheet Details

Part number RM3400
Manufacturer Rectron
File Size 156.98 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet RM3400 Datasheet
Additional preview pages of the RM3400 datasheet.

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Full PDF Text Transcription

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RM3400 N-Channel Enhancement Mode Power MOSFET Description The RM3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D G General Features ƽ VDS = 30V,ID = 5.8A RDS(ON) < 59mȍ @ VGS=2.5V RDS(ON) < 45mȍ @ VGS=4.5V RDS(ON) < 41mȍ @ VGS=10V ƽ High power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package ƽ PWM applications ƽ Load switch ƽ Power management ƽP/N suffix V means AEC-Q101 qualified, e.
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