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RM3400 - N-Channel Enhancement Mode Power MOSFET

General Description

The RM3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • ƽ VDS = 30V,ID = 5.8A RDS(ON) < 59mȍ @ VGS=2.5V RDS(ON) < 45mȍ @ VGS=4.5V RDS(ON) < 41mȍ @ VGS=10V ƽ High power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package ƽ PWM.

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Datasheet Details

Part number RM3400
Manufacturer Rectron
File Size 156.98 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet RM3400 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RM3400 N-Channel Enhancement Mode Power MOSFET Description The RM3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D G General Features ƽ VDS = 30V,ID = 5.8A RDS(ON) < 59mȍ @ VGS=2.5V RDS(ON) < 45mȍ @ VGS=4.5V RDS(ON) < 41mȍ @ VGS=10V ƽ High power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package ƽ PWM applications ƽ Load switch ƽ Power management ƽP/N suffix V means AEC-Q101 qualified, e.