Rectron Semiconductor RM5N800IP
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.| Part No. | RM5N800IP |
|---|---|
| Datasheet | RM5N800IP Download |
| Manufacturer |  Rectron Semiconductor |
| Description | N-Channel Super Junction Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low Gate Charge cause lower driving requirements ƽ100% Avalanche Tested ƽROHS compliant VDS 800 V RDS(ON) TYPDŽ 1000 mΩ ID 5 A Application ƽ Power factor correction˄PFC˅ ƽ Switched mode power supplies(SMPS) ƽ Uninterruptible Power Supply˄UPS˅ Schematic diagram Package Marking And Ordering Information Device Device Package Marking RM5N800IP TO-251 5N800 RM5N800LD TO-252 5N800 Table 1. Absolute M=aximum Ratings (TC=25ć) Para= meter Symbol Drain-Source Voltage (VGS 0V˅ VDS Gate-Source Voltage (VDS 0V) VGS Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) ID (DC) IDM (pluse) Maximum Power Dissipation(Tc=25ć) PD Derate above 25°C Single pulse avalanche energy (Note 2) EAS Avalanche current(Note 1) IAR Repetitive Avalanche energy ˈtAR limited by Tjmax (Note 1) EAR TO-251 TO-252 Value 800 f30 5 3 15...
