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RM6005AR - N-Channel Enhancement Mode Power MOSFET

General Description

The RM6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • ƽ VDS=60V,ID=5A RDS(ON).

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Datasheet Details

Part number RM6005AR
Manufacturer Rectron
File Size 284.13 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet RM6005AR Datasheet

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RM6005AR N-Channel Enhancement Mode Power MOSFET Description The RM6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ) ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability Schematic diagram Application ƽ Power switching application ƽ Hard switched and high frequency circuits ƽ Uninterruptible power supply Halogen-free P/N suffix V means AEC-Q101 qualified, e.