Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The RM6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
ƽ VDS=60V,ID=5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ)
ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability
Schematic diagram
Application
ƽ Power switching application ƽ Hard switched and high frequency circuits ƽ Uninterruptible power...