Rectron Semiconductor RMP3N90IP
RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligned planar process and improved terminal technology,reducing the conduction loss,enhancing the avalanche energy.| Part No. | RMP3N90IP |
|---|---|
| Datasheet | RMP3N90IP Download |
| Manufacturer |  Rectron Semiconductor |
| Description | N-Channel ENHANCEMENT MODE MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% Avalanche Tested ROHS compliant Halogen-free Application High efficiency swith mode power supplies Electronic lamp ballasts Uninterruptible Power Supply UPS VDS@Tjmax 900 V RDS(ON) TYP 2.8 Ω ID 3.0 A Schematic diagram Package Marking And Ordering Information Device Device Package Marking RMP3N90IP TO-251 3N900 RMP3N90LD TO-252 3N900 Table 1.ABSOLUTE MAXIMUM RATINGS
(TC=25 ) Parameter Symbol Drain-Source Voltage (VGS 0V VDS Gate-Source Voltage (VDS 0V) VGS Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) ID (DC) IDM (pluse) Maximum Power Dissipation(Tc=25 ) PD Single pulse avalanche energy (Note2) EAS Avalanche current IAR Operating Junction and Storage Temperature Range TJ,TSTG TO-251 TO-252 Value 900 30 3 1.9 12 50 460 1 -55...+150 Unit V V A A A W mJ A °C 2019-09/15 REV:A Table 2. Thermal Characteris...
