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2SC5890 - Silicon NPN Transistor

Key Features

  • High gain bandwidth product: fT = 7.8 GHz typ.
  • High power gain and low noise figure; PG = 12 dB typ. , NF = 1.0 dB typ. at f = 900 MHz.
  • High collector power dissipation: Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm).
  • High withstanding to ESD of collector to emitter: Withstand up to 700 V (only real value) at C = 200 pF, Rs = 0 condition. Outline MPAK ADE-208-1533 (Z) 1st. Edition Aug.2002 Note: Marking is “FS-”. 3 1 2 1. Emitter 2. Base 3.

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Datasheet Details

Part number 2SC5890
Manufacturer Renesas
File Size 167.46 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC5890 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC5890 www.DataSheet4U.com Silicon NPN Epitaxial UHF / VHF wide band amplifier Features • High gain bandwidth product: fT = 7.8 GHz typ. • High power gain and low noise figure; PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz • High collector power dissipation: Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm) • High withstanding to ESD of collector to emitter: Withstand up to 700 V (only real value) at C = 200 pF, Rs = 0 condition. Outline MPAK ADE-208-1533 (Z) 1st. Edition Aug.2002 Note: Marking is “FS-”. 3 1 2 1. Emitter 2. Base 3.