• Part: 2SC5890
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Renesas
  • Size: 167.46 KB
Download 2SC5890 Datasheet PDF
Renesas
2SC5890
Features - High gain bandwidth product: f T = 7.8 GHz typ. - High power gain and low noise figure; PG = 12 d B typ., NF = 1.0 d B typ. at f = 900 MHz - High collector power dissipation: Pc = 700 m W when using alumina ceramic board (25 x 60 x 0.7 mm) - High withstanding to ESD of collector to emitter: Withstand up to 700 V (only real value) at C = 200 p F, Rs = 0 condition. Outline MPAK ADE-208-1533 (Z) 1st. Edition Aug.2002 Note: Marking is “FS-”. 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation V CBO V CEO VEBO IC Pc Junction temperature Tj Storage temperature Tstg - When using alumina ceramic board (25 x 60 x 0.7 mm) .. Ratings 20 12 1.5 75 700- 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector...