• Part: 2SJ332
  • Description: Silicon P-Channel MOS FET
  • Manufacturer: Renesas
  • Size: 77.36 KB
Download 2SJ332 Datasheet PDF
Renesas
2SJ332
Features - - - - - Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 .. 2SJ332(L), 2SJ332(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse)- IDR Pch- Tch Tstg 2 1 Ratings - 20 ±20 - 10 - 40 - 10 20 150 - 55 to +150 Unit V V A A A W °C °C .. 2SJ332(L), 2SJ332(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr - 20 ±20 - - - 1.0 - - 6 - - - - - - - - -...