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2SK3736 - Silicon N-Channel MOSFET

Features

  • Capable of 2.5 V gate drive.
  • Low drive current.
  • Low on-resistance Outline.

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Datasheet Details

Part number 2SK3736
Manufacturer Renesas
File Size 118.48 KB
Description Silicon N-Channel MOSFET
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www.DataSheet4U.com 2SK3736 Silicon N Channel MOS FET Power Switching REJ03G0525-0200 Rev.2.00 Jul 27, 2006 Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note1 IDR PchNote2 Tch Tstg Ratings 250 ±10 6 24 6 30 150 –55 to +150 Unit V V A A A W °C °C Rev.2.00 Jul 27, 2006 page 1 of 6 2SK3736 Electrical Characteristics www.
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