2SK3736 Datasheet | Renesas

Features - Capable of 2.5 V gate drive - Low drive current - Low on-resistance Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 250 ±10 6 24 6 30 150 - 55 to +150 Unit V V A A A W °C °C Rev.2.00 Jul 27, 2006 page 1 of 6 Electrical Characteristics .. (Ta = 25°C) Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 250 ±10 - - 0.5 - - 5.5 - - - - - - - - - - - - Typ - - - - - 0.55 0.57 9.2 450 100 60 17 0.8 9.5 14 48 88 25 0.94 125 Max - - ±10 5 1.5 0.7 0.8 - - - - - - - - - - - 1.45 - Unit V V µA µA V Ω Ω S p F p F p F n C n C n C ns ns ns ns V ns Test Conditions ID = 10 m A, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±8 V, VDS = 0 VDS = 250 V, VGS = 0 VDS = 10 V, ID = 1 m A ID = 3 A, VGS = 4 V Note3 ID = 3 A, VGS = 2.5V Note3 ID = 3 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 200 V, VGS = 4 V, ID = 6 A VGS = 4 V, ID= 3 A, RL = 10 Ω, Rg = 10 Ω Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Output capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Notes: 3. Pulse test IF = 6 A, VGS = 0 Note3 IF = 6 A, VGS = 0 di F/dt = 100 A/µs Rev.2.00 Jul 27, 2006 page 2 of 6 Main Characteristics .....