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BIC702M - VHF/UHF RF Amplifier

Features

  • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space.
  • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz).
  • Low noise; NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz).
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200pF, Rs = 0 conditions.
  • Provide mini mold package; MPAK-4 (SOT-143Rmod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2.

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Datasheet preview – BIC702M

Datasheet Details

Part number BIC702M
Manufacturer Renesas Electronics
File Size 206.20 KB
Description VHF/UHF RF Amplifier
Datasheet download datasheet BIC702M Datasheet
Additional preview pages of the BIC702M datasheet.

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Full PDF Text Transcription

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To all our customers www.DataSheet4U.com Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
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