Datasheet4U Logo Datasheet4U.com
Renesas logo

H5N2503P

Manufacturer: Renesas

H5N2503P datasheet by Renesas.

H5N2503P datasheet preview

H5N2503P Datasheet Details

Part number H5N2503P
Datasheet H5N2503P_RenesasTechnology.pdf
File Size 121.46 KB
Manufacturer Renesas
Description Silicon N Channel MOS FET High Speed Power Switching
H5N2503P page 2 H5N2503P page 3

H5N2503P Overview

H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07, 2005.

H5N2503P Key Features

  • Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V)
  • High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)
  • Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A)
  • Avalanche ratings
Renesas logo - Manufacturer

More Datasheets from Renesas

View all Renesas datasheets

Part Number Description
H5N2501LD Silicon N Channel MOS FET High Speed Power Switching
H5N2501LM Silicon N Channel MOS FET High Speed Power Switching
H5N2501LS Silicon N Channel MOS FET High Speed Power Switching
H5N2502CF Silicon N Channel MOS FET High Speed Power Switching
H5N2504DL Silicon N Channel MOS FET High Speed Power Switching
H5N2504DS Silicon N Channel MOS FET High Speed Power Switching
H5N2505DL Silicon N Channel MOS FET High Speed Power Switching
H5N2505DS Silicon N Channel MOS FET High Speed Power Switching
H5N2507P High Speed Power Switching MOSFET
H5N2508DL Silicon N Channel MOS FET High Speed Power Switching

H5N2503P Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts