H5N2503P
H5N2503P is Silicon N Channel MOS FET High Speed Power Switching manufactured by Renesas.
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07, 2005
Features
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- Low
- Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V)
- High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)
- Low gate charge: Qg = 140 n C typ (at VDD = 200 V, VGS = 10 V, ID = 50 A)
- Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
1. Gate 2. Drain (Flange) 3. Source
Rev.2.00 Sep 07, 2005 page 1 of...
