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H5N2503P Datasheet Silicon N Channel Mos Fet High Speed Power Switching

Manufacturer: Renesas

Overview: H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.

Key Features

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  • Low.
  • Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V).
  • High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A).
  • Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A).
  • Avalanche ratings Outline.

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