H5N2522FP-E0-E Overview
H5N2522FP-E0-E 250V - 12A - MOS FET High Speed Power Switching.
H5N2522FP-E0-E Key Features
- Low on-resistance RDS(on) = 0.13 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching
- Built-in fast recovery diode