H5N5012P
Key Features
- Low on-resistance
- Low leakage current
- High speed switching
- Built-in fast recovery diode Outline TO-3P D G
- Drain (Flange)
- Source S 1 2
- Part: H5N5012P
- Description: Silicon N Channel MOS FET High Speed Power Switching
- Manufacturer: Renesas
- Size: 85.75 KB