H7N0312AB Description
H7N0312AB Silicon N Channel MOS FET High Speed Power Switching.
H7N0312AB Key Features
- Low on-resistance RDS (on) = 2.6 mΩ typ
- Low drive current
- 4.5 V gate drive device can be driven from 5 V source
- Part: H7N0312AB
- Manufacturer: Renesas (official site)
- Size: 71.24 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| H7N0312LD | Silicon N-Channel MOSFET |
| H7N0312LM | Silicon N-Channel MOSFET |
| H7N0312LS | Silicon N-Channel MOSFET |
| H7N0310LD | Silicon N-Channel MOSFET |
| H7N0310LM | Silicon N-Channel MOSFET |