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H7N0312AB
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 2.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D
123
G S
REJ03G1127-0400 (Previous: ADE-208-1571B)
Rev.4.00 Sep 07, 2005
1. Gate 2. Drain (Flange) 3. Source
Rev.4.00 Sep 07, 2005 page 1 of 6
H7N0312AB
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
H7N0312AB Datasheet
