H7N0312AB Overview
H7N0312AB Silicon N Channel MOS FET High Speed Power Switching.
H7N0312AB Key Features
- Low on-resistance RDS (on) = 2.6 mΩ typ
- Low drive current
- 4.5 V gate drive device can be driven from 5 V source
H7N0312AB Datasheet Details
| Part number | H7N0312AB |
|---|---|
| Datasheet | H7N0312AB_RenesasTechnology.pdf |
| File Size | 71.24 KB |
| Manufacturer | Renesas |
| Description | Silicon N-Channel MOSFET |
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