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H7N0607DS Description

H7N0607DL, H7N0607DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0124-0300 Rev.3.00.

H7N0607DS Key Features

  • Low on-resistance RDS(on) = 26 mΩ typ
  • Low drive current
  • Capable of 4.5 V gate drive