HAT1089C Overview
HAT1089C Silicon P Channel MOS FET Power Switching REJ03G1227-0300 Rev.3.00 Jun.
HAT1089C Key Features
- Low on-resistance RDS(on) = 79 mΩ typ. (at VGS = -4.5 V)
- Low drive current
- 2.5 V gate drive devices
- High density mounting
Datasheet Details
| Part number | HAT1089C |
|---|---|
| Manufacturer | Renesas |
| File Size | 108.27 KB |
| Description | Silicon P-Channel Power MOSFET |
| Datasheet | HAT1089C_RenesasTechnology.pdf |
|
|