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HAT1110R Datasheet Silicon P-Channel Power MOSFET

Manufacturer: Renesas

Overview

HAT1110R Silicon P Channel Power MOS FET Power Switching.

Key Features

  • Capable of.
  • 4.5 V gate drive.
  • Low drive current.
  • High density mounting Outline SOP-8 78 56 DD DD 2 4 G G S1 MOS1 S3 MOS2 8 7 65 1 234 REJ03G0416-0200 Rev.2.00 Oct.07.2004 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS.
  • 80 Gate to source voltage VGSS ±20 Drain current Drain peak current ID.
  • 1 ID(pulse)Note1.
  • 6 Reverse drain current Channel.