HAT1110R - Silicon P-Channel Power MOSFET

Product Overview

Renesas Technology

Part number	HAT1110R
Manufacturer	Renesas Technology
File Size	103.18 KB
Description	Silicon P-Channel Power MOSFET
Datasheet	HAT1110R Datasheet
Additional preview pages of the HAT1110R datasheet.

Capable of.
4.5 V gate drive.
Low drive current.
High density mounting Outline SOP-8 78 56 DD DD 2 4 G G S1 MOS1 S3 MOS2 8 7 65 1 234 REJ03G0416-0200 Rev.2.00 Oct.07.2004 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS.
80 Gate to source voltage VGSS ±20 Drain current Drain peak current ID.
1 ID(pulse)Note1.
6 Reverse drain current Channel.

📁 Similar Datasheet

Other Datasheets by Renesas Technology

Published: Nov 20, 2008 |