HAT2099H
Features
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS (on) = 2.9 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 4 G
5 D
S SS 1 23
REJ03G1187-0500 (Previous: ADE-208-1432C)
Rev.5.00 Sep 07, 2005
1, 2, 3 4 5
Source Gate Drain
Rev.5.00 Sep 07, 2005 page 1 of 7
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS VGSS
ID ID (pulse) Note 1
IDR IAP Note 3 EAR Note 3 Pch Note 2
Tch
Tstg
Value 30 ±20 50 200 50 5 2.5 30 150
- 55 to +150
(Ta = 25°C) Unit
V V A A A A m J W °C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source...
