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HAT2105T - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance.
  • Capable of 4 V gate drive.
  • High density mounting Outline.

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Datasheet Details

Part number HAT2105T
Manufacturer Renesas
File Size 88.63 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet HAT2105T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAT2105T Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 ) 87 6 5 123 4 1 8 D D 4 5 G G S3 MOS1 S6 MOS2 REJ03G0384-0200 Rev.2.00 Aug 06, 2007 1, 8 Drain 3, 6 Source 4, 5 Gate 2, 7 NC Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 200 Gate to source voltage VGSS ±15 Drain current Drain peak current ID 0.5 ID (pulse)Note1 2 Body-drain diode reverse drain current IDR 0.5 Channel dissipation PchNote 2 1 PchNote 3 1.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.