HAT2164H - Silicon N-Channel Power MOSFET

Renesas

Key Features

Capable of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V) Outline.

HAT2164H silicon n-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	HAT2164H
Manufacturer	Renesas
File Size	78.93 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HAT2164H Datasheet

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HAT2164H Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0003-0500 Rev.5.00 Sep 26, 2005 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3.