HN58X2564I - EEPROM

This page provides the datasheet information for the HN58X2564I, a member of the HN58X2532I EEPROM family.

Product Overview

Renesas Technology

Part number	HN58X2564I
Manufacturer	Renesas Technology
File Size	168.72 KB
Description	EEPROM
Datasheet	HN58X2564I Datasheet
Additional preview pages of the HN58X2564I datasheet.

HN58X25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM).

Single supply: 1.8 V to 5.5 V.
Serial Peripheral Interface compatible (SPI bus)  SPI mode 0 (0,0), 3 (1,1).
Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V).
Power dissipation:  Standby: 3 µA (max)  Active (Read): 3.0 mA (max)  Active (Write): 3.5 mA (max).
Automatic page write: 32-byte/page.
Write cycle time: 5 ms (2.5 V min), 8 ms (1.8 V min).
Endurance: 106 Erase/Write Cycles.
Data retention: 10 Years.

HN58X2564IAG - EEPROM (Renesas)
HN58X2532IAG - EEPROM (Renesas)
HN58X25512I - EEPROM (Renesas)
HN58X2402 - EEPROM (Hitachi Semiconductor)
HN58X2402SFPIAG - EEPROM (Renesas)
HN58X2402SI - EEPROM (Hitachi Semiconductor)
HN58X2404 - EEPROM (Hitachi Semiconductor)
HN58X2404SFPIAG - EEPROM (Renesas)
HN58X2404SI - Two-wire serial interface (2k EEPROM 256-word x 8-bit) 4k EEPROM (512-word x 8-bit) (Hitachi Semiconductor)
HN58X2408 - EEPROM (Hitachi Semiconductor)

Other Datasheets by Renesas Technology

Published: Dec 10, 2005 |