Datasheet4U Logo Datasheet4U.com

HRC0203C - Silicon Schottky Barrier Diode

Datasheet Summary

Features

  • Low forward voltage drop and suitable for high efficiency rectifying.
  • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HRC0203C Laser Mark S8 Package Code UFP Pin Arrangement Cathode mark Mark 1 S8 2 1. Cathode 2. Anode HRC0203C Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol VRRM.

📥 Download Datasheet

Datasheet preview – HRC0203C

Datasheet Details

Part number HRC0203C
Manufacturer Renesas Technology
File Size 115.16 KB
Description Silicon Schottky Barrier Diode
Datasheet download datasheet HRC0203C Datasheet
Additional preview pages of the HRC0203C datasheet.
Other Datasheets by Renesas Technology

Full PDF Text Transcription

Click to expand full text
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Published: |