HRV103A - Silicon Schottky Barrier Diode

Features

Low forward voltage drop and suitable for high efficiency rectifying.
Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRV103A Laser Mark S1 Package Code TURP Pin Arrangement Cathode mark Mark 1 S1 2 1. Cathode 2. Anode Rev.1.00 Oct 12, 2004 page 1 of 5 HRV103A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-R.

Renesas Technology

Datasheet Details

Part number	HRV103A
Manufacturer	Renesas Technology
File Size	109.45 KB
Description	Silicon Schottky Barrier Diode
Datasheet	HRV103A Datasheet
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www.DataSheet4U.net HRV103A Silicon Schottky Barrier Diode for Rectifying REJ03G0398-0100 Rev.1.00 Oct 12, 2004 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRV103A Laser Mark S1 Package Code TURP Pin Arrangement Cathode mark Mark 1 S1 2 1. Cathode 2. Anode Rev.1.00 Oct 12, 2004 page 1 of 5 HRV103A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Symbol VRRM VR 2 IO * IFSM * Tj 1 Value 30 30 1 5 125 Unit V V A A °C °C Storage temperature Tstg −55 to +125 Notes: 1.

Published: Jul 6, 2011 |