HSL226
HSL226 is Silicon Schottky Barrier Diode manufactured by Renesas.
Features
- Low Power consumption (Low reverse leak current) and high speed (Low capacitance).
- Lineup of Environmental friendly Halogen free type (HSL226-N)
- Extremely small Flat Lead Package (EFP) is suitable for surface mount design.
Ordering Information
Type No. HSL226 HSL226-N (Halogen-free type) Laser Mark V Package Name EFP Package Code PXSF0002ZA-A
Pin Arrangement
Cathode mark Mark 1
2 1. Cathode 2. Anode
Rev.3.00 Feb 25, 2007 page 1 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse voltage Non-Repetitive Peak forward surge current Forward current Junction temperature Storage temperature Note: 10 ms Sine Wave 1 pulse Symbol VRRM IFSM
- IF Tj Tstg Value 25 200 50 125
- 55 to +125 Unit V m A m A °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance Symbol VF1 VF2 IR C Min Typ Max 0.33 0.38 450 2.80 Unit V Test Condition IF = 1 m A IF = 5 m A VR = 20 V VR = 1 V, f = 1 MHz
V n A p F
Note: For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as unquestioned. Please kindly consider soldering nature.
Rev.3.00 Feb 06, 2007 page 2 of 4
Main Characteristic
101 100 10-1
Forward current IF (A)
10-4 Pulse test Ta=75°C
10-2 10-3 10-4 10-5 10-6 10-7 10-8
Ta=75°C Ta=25°C
Reverse current IR (A)
10-5
10-6 Ta=25°C 10-7
10-8 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V)
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
Fig.1 Forward current vs. Forward voltage...
