• Part: HVC190
  • Description: Silicon Epitaxial Planar PIN Diode
  • Category: Diode
  • Manufacturer: Renesas
  • Size: 142.86 KB
Download HVC190 Datasheet PDF
Renesas
HVC190
Features - Low capacitance. (C = 0.35 p F max) - Low forward resistance. (rf = 3.0 Ω typ) - Ultra small Flat Lead Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC190 Laser Mark H9 Package Code UFP Pin Arrangement Cathode mark Mark 1 H9 2 1. Cathode 2. Anode Rev.1.00 Dec 22, 2004 page 1 of 4 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 50 50 150 125 - 55 to +125 Unit V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Forward resistance 1 ESD-Capability - Note: Symbol VF IR C rf  Min - - - - 200 Typ - - - 3.0  Max 1.0 100 0.35 5.0  Unit V n A p F Ω V Test Condition IF = 50 m A VR = 50 V VR = 50 V, f = 1 MHz IF = 10 m A, f = 100 MHz C = 200 p F, Both forward and reverse direction 1 pulse 1. Failure criterion ; IR ≥ 200 n A at VR = 50 V Rev.1.00 Dec 22, 2004 page 2 of...