HVM189S
HVM189S is Silicon Epitaxial Planar Pin Diode manufactured by Renesas.
Features
- Low forward resistance. (rf = 5.5 Ω max)
- MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HVM189S Laser Mark H9 Package Code MPAK
Pin Arrangement
3 1. Cathode2 2. Anode1 3. Cathode1 Anode2
2 1 (Top View)
Rev.1.00 Dec 20, 2004 page 1 of 4
Data Sheet 4 U .
..
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: 1. Per one device. Symbol VR IF 1 Pd
- Tj Tstg Value 60 50 100 125
- 55 to +125 Unit V m A m W °C °C
Electrical Characteristics
(Ta = 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance 1 ESD-Capability
- Note: Symbol IR VF C rf
- Min
- -
- 3. 5 200 Typ
- -
- -
- Max 100 1.0 2.4 5.5
- Unit n A V p F Ω V Test Condition VR = 60 V IF = 10 m A VR = 0 V, f = 1 MHz IF = 10 m A, f = 100 MHz C = 200 p F, R = 0 Ω, Both forward and reverse direction 1 pulse.
1. Failure criterion; IR > 100 n A at VR = 60 V
Rev.1.00 Dec 20, 2004 page 2 of 4
Data Sheet 4 U .
..
Main Characteristic
10-3 10-6 10-7 10
Forward current IF (A)
-5
10-7
Reverse current IR (A)
10-8 10-9
10-9
10-10 10-11...
