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K3161 - 2SK3161

Key Features

  • Low on-resistance RDS =90 mΩ typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 4 G 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 1 1 2 3 2 3 S Rev.3.00 Sep 07, 2005 page 1 of 8 2SK3161 Absolute Maximum Ratings www.DataSheet4U.