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K3446 - 2SK3446

Key Features

  • Capable of 2.5 V gate drive.
  • Low drive current.
  • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 4 V) Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 4 V) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) D G 1. Source 2. Drain 3. Gate 32 1 S www.DataSheet4U.com Rev.8.00 Sep 07, 2005 page 1 of 6 2SK3446 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 150 ±10 1 4 1 0.