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M5M5V416CWG-55HI - CMOS STATIC RAM

General Description

The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's high-perf ormance 0.18µm CMOS technology .

Key Features

  • Single 2.7~3.6V power supply Small stand-by current: 0.2µA (3.00V, ty p. ) No clocks, No ref resh Data retention supply v oltage =2.0V All inputs and outputs are TTL compatible. Easy memory expansion by S1#, S2, BC1# and BC2# Common Data I/O Three-state outputs: OR-tie capability OE# prev ents data contention in the I/O bus Process technology : 0.18µm CMOS Package: 48ball 7.0mm x 8.5mm CSP Version, Operating temperature Part name Power Supply Access time.
  • Typical(3.0V) max. 55ns Activ.

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www.DataSheet4U.com RENESAS LSIs 2003.08.21 Ver. 7.0 M5M5V416CWG -55HI, -70HI 4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM DESCRIPTION The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's high-perf ormance 0.18µm CMOS technology . The M5M5V416C is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es. M5M5V416CWG is packaged in a CSP (chip scale package), with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball) and ball pitch of 0.75mm. It giv es the best solution f or a compaction of m ounting area as well as f lexibility of wiring pattern of printed circuit boards. - FEATURES Single 2.7~3.