M6MGD13TW34DWG - CMOS FLASH MEMORY

Product Overview

Renesas Technology

Datasheet Details

Part number	M6MGD13TW34DWG
Manufacturer	Renesas Technology
File Size	151.58 KB
Description	CMOS FLASH MEMORY
Datasheet	M6MGD13TW34DWG Datasheet
Additional preview pages of the M6MGD13TW34DWG datasheet.

Product details

Description

The M6MGD13TW34DWG is a Stacked Chip Scale Package The M6MGD13TW34DWG is suitable for a high performance cellular phone and a mobile PC that are required to be small (S-CSP) that contents 128M-bit Flash memory and 32M-bit mounting area, weight and small power dissipation.

Features

Access Time Flash Mobile RAM Supply Voltage Ambient Temperature Package 70ns (Max. ) 80ns (Max. ) FM-VCC=2.7 ~ 3.0V Ta= -40 ~ 85 degree 72pin S-CSP, Ball pitch 0.80mm Outer-ball:Sn-Ag-Cu.

📁 Similar Datasheet

M6MGB160S2BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
M6MGB160S4BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
M6MGB162S2BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
M6MGB162S4BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
M6MGB166S2BWG - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP (Mitsubishi)
M6MGB166S4BWG - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP (Mitsubishi)
M6MGB321S4TP - CMOS SRAM (Renesas)
M6MGB321S8TP - CMOS SRAM (Renesas)

Other Datasheets by Renesas Technology

M6MGD13TW66CWG-P - CMOS FLASH MEMORY
M6MGD137W34DWG - CMOS FLASH MEMORY

Published: Dec 18, 2006 |