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M6MGD13TW34DWG - CMOS FLASH MEMORY

General Description

The M6MGD13TW34DWG is a Stacked Chip Scale Package The M6MGD13TW34DWG is suitable for a high performance cellular phone and a mobile PC that are required to be small (S-CSP) that contents 128M-bit Flash memory and 32M-bit mounting area, weight and small power dissipation.

Key Features

  • Access Time Flash Mobile RAM Supply Voltage Ambient Temperature Package 70ns (Max. ) 80ns (Max. ) FM-VCC=2.7 ~ 3.0V Ta= -40 ~ 85 degree 72pin S-CSP, Ball pitch 0.80mm Outer-ball:Sn-Ag-Cu.

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www.DataSheet4U.com RENESAS LSIs M6MGD13TW34DWG 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Description The M6MGD13TW34DWG is a Stacked Chip Scale Package The M6MGD13TW34DWG is suitable for a high performance cellular phone and a mobile PC that are required to be small (S-CSP) that contents 128M-bit Flash memory and 32M-bit mounting area, weight and small power dissipation. Mobile RAM in a 72-pin Stacked CSP for lead free use. 128M-bit Flash memory is a 8,388,608 words, single power supply and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR IV (Divided bit-line NOR IV) architecture for the memory cell.