M6MGD13TW66CWG-P - CMOS FLASH MEMORY

Product Overview

Renesas Technology

Datasheet Details

Part number	M6MGD13TW66CWG-P
Manufacturer	Renesas Technology
File Size	150.94 KB
Description	CMOS FLASH MEMORY
Datasheet	M6MGD13TW66CWG-P Datasheet
Additional preview pages of the M6MGD13TW66CWG-P datasheet.

Product details

Description

The M6MGD13TW66CWG-P is a Stacked Chip Scale Package (S-CSP) that contents 128M-bit Flash memory and 64M-bit Mobile RAM in a 72-pin Stacked CSP with leaded solder ball.

Features

Access Time Random Access/ Page Access Flash Mobile RAM Supply Voltage 70ns /25ns (Max. ) 85ns /25ns (Max. ) FM-VCC=2.7 ~ 3.0V Ta= -40 ~ 85 degree 72pin S-CSP, Ball pitch 0.80mm Outer-ball:Sn-Pb Ambient Temperature 64M-bit Mobile RAM is a 4,194,304 words high density RAM Package fabricated by CMOS technology for the peripheral circuit and DRAM cell for the memory array. The interface is compatible to an asynchronous SRAM. The cells are automatically refreshed and the refresh control is Applicatio.

📁 Similar Datasheet

M6MGB160S2BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
M6MGB160S4BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
M6MGB162S2BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
M6MGB162S4BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP (Mitsubishi)
M6MGB166S2BWG - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP (Mitsubishi)
M6MGB166S4BWG - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP (Mitsubishi)
M6MGB321S4TP - CMOS SRAM (Renesas)
M6MGB321S8TP - CMOS SRAM (Renesas)

Other Datasheets by Renesas Technology

M6MGD13TW34DWG - CMOS FLASH MEMORY
M6MGD137W34DWG - CMOS FLASH MEMORY

Published: Dec 31, 2006 |