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R1EX24256ATB00I - Two-wire serial interface 256k EEPROM

This page provides the datasheet information for the R1EX24256ATB00I, a member of the R1EX24256ASA00I Two-wire serial interface 256k EEPROM family.

Datasheet Summary

Description

R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM).

They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology.

Features

  • Single supply: 1.8 V to 5.5 V Two-wire serial interface (I2C serial bus) Clock frequency: 400 kHz Power dissipation:  Standby: 2 µA (max)  Active (Read): 1 mA (max)  Active (Write): 5 mA (max) Automatic page write: 64-byte/page Write cycle time: 5 ms Endurance: 106 Cycles Data retention: 10 Years.
  • Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest Rene.

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Datasheet Details

Part number R1EX24256ATB00I
Manufacturer Renesas Technology
File Size 173.34 KB
Description Two-wire serial interface 256k EEPROM
Datasheet download datasheet R1EX24256ATB00I Datasheet
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R1EX24256ASA00I R1EX24256ATB00I Two-wire serial interface 256k EEPROM (32-kword × 8-bit) REJ03C0326-0001 Preliminary Rev.0.01 Jan. 10, 2008 www.DataSheet4U.com Description R1EX24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 64-byte page programming function to make their write operation faster. Features • • • • Single supply: 1.8 V to 5.
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