R1LV1616HSA-5SI Datasheet | Renesas

Description The R1LV1616HSA-I Series is 16-Mbit static RAM organized 1-Mword  16-bit / 2-Mword  8-bit with embedded ECC. R1LV1616HSA-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting. Features - Single 3.0 V supply: 2.7 V to 3.6 V - Fast access time: 45/55 ns (max) - Power dissipation:  Active: 9 m W/MHz (typ)  Standby: 1.5 W (typ) - pletely static memory.  No clock or timing strobe required - Equal access and cycle times - mon data input and output.  Three state output - Battery backup operation.  2 chip selection for battery backup - Temperature range: - 40 to +85C - Byte function (x8 mode) available by BYTE# & A-1 - Embedded ECC (error checking and correction) for single-bit error correction Rev.1.03, Feb.20.2020, page 1 of 19 R1LV1616HSA-I Series Ordering Information Type No. R1LV1616HSA-4SI R1LV1616HSA-5SI Access time 45 ns 55 ns 48-pin plastic TSOPI Package Rev.1.03, Feb.20.2020, page 2 of 19 R1LV1616HSA-I Series Pin Arrangement 48-pin TSOP A15 A14 A13 A12 A11 A10 A9...