R2A20101BM Description
Solder on the underside pads improves heat-radiation charac.
R2A20101BM Key Features
- Built-in low Ron power MOS FETs Pch Ron = 0.30 Ω (Typ), Nch Ron = 0.14 Ω (Typ)
- High switching frequency: 2 MHz (Max)
- Output current: 650 mA (Max)
- Output ON/OFF control
- Vout control
- Power good monitor
- Current share for redundant power supply operation
- Vout = 0.5 V to (VIN
- 0.5) V
- POL (Point of Load) power supplies